The NSN 5961-01-207-9576 part numbers 143201128, IRFF113 manufactured by Eaton Corporation, International Rectifier Corporat is available in our inventory. As an ASAP Semiconductor owned and operated website, ASAP Aviation Unlimited has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our NSN 5961-01-207-9576 inventory quickly and efficiently. Our focus on quality control has earned us our FAA AC 0056B accreditation and AS9120B, ISO 9001:2015 certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send an Instant RFQ form from this page for NSN 5961-01-207-9576 parts of Transistor, and one of our account managers will respond to it within fifteen minutes or less.
| Alternative NSN: 5961-01-207-9576 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012079576 |
| NCB Code: USA (01) |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 143201128 | eaton corporation | transistor | Avl | RFQ |
| IRFF113 | international rectifier corporat | transistor | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| ALAT | (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL JUNCTION TYPE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM DRAIN CURRENT AND 12.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
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