The NSN 5962-01-075-7602 part numbers DH75703-204, 18007, HM9-7643-B2052-204, ROM PROM FAMILY 017, 82S137F manufactured by Advanced Micro Devices Inc, Mmi Amd, Intersil Corporation, Dla Land And Maritime, Philips Semiconductors Inc is available in our inventory. As an ASAP Semiconductor owned and operated website, ASAP Aviation Unlimited has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our NSN 5962-01-075-7602 inventory quickly and efficiently. Our focus on quality control has earned us our FAA AC 0056B accreditation and AS9120B, ISO 9001:2015 certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send an Instant RFQ form from this page for NSN 5962-01-075-7602 parts of Microcircuit Memory, and one of our account managers will respond to it within fifteen minutes or less.
Alternative NSN: 5962-01-075-7602 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 010757602 |
NCB Code: USA (01) |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
DH75703-204 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
18007 | mmi amd | microcircuit memory | Avl | RFQ |
HM9-7643-B2052-204 | intersil corporation | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 017 | dla land and maritime | microcircuit memory | Avl | RFQ |
82S137F | philips semiconductors inc | microcircuit memory | Avl | RFQ |
MM5353J | mmi amd | microcircuit memory | Avl | RFQ |
CC5194-204 | philips semiconductors inc | microcircuit memory | Avl | RFQ |
932883-204 | raytheon company | microcircuit memory | Avl | RFQ |
B2052-204 | intersil corporation | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
TEST | TEST DATA DOCUMENT | 82577-932883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
ADAQ | BODY LENGTH | 0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
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