The NSN 5962-01-099-6382 part numbers DM54S573J 883, S82S137F 883B, 21008-04 manufactured by National Semiconductor Corp, Philips Semiconductors Inc, L 3 Communications Corporation is available in our inventory. As an ASAP Semiconductor owned and operated website, ASAP Aviation Unlimited has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our NSN 5962-01-099-6382 inventory quickly and efficiently. Our focus on quality control has earned us our FAA AC 0056B accreditation and AS9120B, ISO 9001:2015 certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send an Instant RFQ form from this page for NSN 5962-01-099-6382 parts of Microcircuit Memory, and one of our account managers will respond to it within fifteen minutes or less.
| Alternative NSN: 5962-01-099-6382 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010996382 |
| NCB Code: USA (01) |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| DM54S573J 883 | national semiconductor corp | microcircuit memory | Avl | RFQ |
| S82S137F 883B | philips semiconductors inc | microcircuit memory | Avl | RFQ |
| 21008-04 | l 3 communications corporation | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.925 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 140.00 MILLIAMPERES MAXIMUM SUPPLY |
| CZEP | CAPITANCE RATING PER CHARACTERISTIC | 5.00 INPUT PICOFARADS NOMINAL AND 8.00 OUTPUT PICOFARADS NOMINAL |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM DELAY |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| ADAT | BODY WIDTH | 0.302 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | 55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
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