The NSN 5962-01-123-7991 part numbers MM5301, SN92928W-852, B1584-505B, CC1643, B2054-852 manufactured by Mmi Amd, Texas Instruments Inc Metallurgi, Intersil Corporation, Philips Semiconductors Inc, Raytheon Company is available in our inventory. As an ASAP Semiconductor owned and operated website, ASAP Aviation Unlimited has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our NSN 5962-01-123-7991 inventory quickly and efficiently. Our focus on quality control has earned us our FAA AC 0056B accreditation and AS9120B, ISO 9001:2015 certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send an Instant RFQ form from this page for NSN 5962-01-123-7991 parts of Microcircuit Memory, and one of our account managers will respond to it within fifteen minutes or less.
Alternative NSN: 5962-01-123-7991 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011237991 |
NCB Code: USA (01) |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
MM5301 | mmi amd | microcircuit memory | Avl | RFQ |
SN92928W-852 | texas instruments inc metallurgi | microcircuit memory | Avl | RFQ |
B1584-505B | intersil corporation | microcircuit memory | Avl | RFQ |
CC1643 | philips semiconductors inc | microcircuit memory | Avl | RFQ |
B2054-852 | intersil corporation | microcircuit memory | Avl | RFQ |
82S129 | philips semiconductors inc | microcircuit memory | Avl | RFQ |
5301-F | mmi amd | microcircuit memory | Avl | RFQ |
SN54S287 | texas instruments inc metallurgi | microcircuit memory | Avl | RFQ |
CC5193-852W | philips semiconductors inc | microcircuit memory | Avl | RFQ |
SN91026W | texas instruments inc metallurgi | microcircuit memory | Avl | RFQ |
17826 | mmi amd | microcircuit memory | Avl | RFQ |
932820-852 | raytheon company | microcircuit memory | Avl | RFQ |
5301-1F | mmi amd | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 82577-932820 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 89.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
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