The NSN 5962-01-192-0210 part numbers HM6116-4, C12424-2, MKB6116J-83 manufactured by Hitachi America Ltd, Hitachi Kokusai Electric America Ltd, Other C, Stmicroelectronics Inc is available in our inventory. As an ASAP Semiconductor owned and operated website, ASAP Aviation Unlimited has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our NSN 5962-01-192-0210 inventory quickly and efficiently. Our focus on quality control has earned us our FAA AC 0056B accreditation and AS9120B, ISO 9001:2015 certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send an Instant RFQ form from this page for NSN 5962-01-192-0210 parts of Microcircuit Memory, and one of our account managers will respond to it within fifteen minutes or less.
Alternative NSN: 5962-01-192-0210 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011920210 |
NCB Code: USA (01) |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
HM6116-4 | hitachi america ltd | microcircuit memory | Avl | RFQ |
HM6116-4 | hitachi kokusai electric america ltd | microcircuit memory | Avl | RFQ |
C12424-2 | other c | microcircuit memory | Avl | RFQ |
MKB6116J-83 | stmicroelectronics inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 31.75 MILLIMETERS NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH SPEED AND LOW POWER AND W/ENABLE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
ADAT | BODY WIDTH | 14.66 MILLIMETERS NOMINAL |
ADAU | BODY HEIGHT | 5.51 MILLIMETERS MAXIMUM |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | 65.0/+150.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
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