NSN 5962-01-201-4055, (5962012014055) Microcircuit Memory Parts

The NSN 5962-01-201-4055 part numbers 722912-50, 43827-1, ROM PROM FAMILY 008 manufactured by Raytheon Company, Dla Land And Maritime is available in our inventory. As an ASAP Semiconductor owned and operated website, ASAP Aviation Unlimited has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our NSN 5962-01-201-4055 inventory quickly and efficiently. Our focus on quality control has earned us our FAA AC 0056B accreditation and AS9120B, ISO 9001:2015 certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send an Instant RFQ form from this page for NSN 5962-01-201-4055 parts of Microcircuit Memory, and one of our account managers will respond to it within fifteen minutes or less.


Alternative NSN: 5962-01-201-4055
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 012014055
NCB Code: USA (01)

Part Number's List for NSN 5962-01-201-4055, 5962012014055

Part No Manufacturer Item Name QTY RFQ
722912-50 raytheon company microcircuit memory Avl RFQ
43827-1 raytheon company microcircuit memory Avl RFQ
ROM PROM FAMILY 008 dla land and maritime microcircuit memory Avl RFQ

Technical Characteristics of NSN 5962012014055

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.840 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING794.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT AND HIGH IMPEDANCE
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQZPINPUT CIRCUIT PATTERN10 INPUT
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
CZEQTIME RATING PER CHACTERISTIC85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEPROM
TTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
ADATBODY WIDTH0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
ADAUBODY HEIGHT0.185 INCHES NOMINAL
CQSJINCLOSURE MATERIALCERAMIC
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).

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