The NSN 5962-01-236-6683 part numbers ROM PROM FAMILY 008, 722912-50, 42627-1 manufactured by Dla Land And Maritime, Raytheon Company is available in our inventory. As an ASAP Semiconductor owned and operated website, ASAP Aviation Unlimited has access to over three billion parts, paired with easy-to-use search engines that enable our customers to browse through our NSN 5962-01-236-6683 inventory quickly and efficiently. Our focus on quality control has earned us our FAA AC 0056B accreditation and AS9120B, ISO 9001:2015 certification, and we are the only independent distributor with a No China Sourcing pledge. If you are ready to get started, you can send an Instant RFQ form from this page for NSN 5962-01-236-6683 parts of Microcircuit Memory, and one of our account managers will respond to it within fifteen minutes or less.
| Alternative NSN: 5962-01-236-6683 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012366683 |
| NCB Code: USA (01) |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 008 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 722912-50 | raytheon company | microcircuit memory | Avl | RFQ |
| 42627-1 | raytheon company | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | 55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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